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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS4C256K16E0-35JC5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ400°C70°C644 K
AS4C256K16E0-50JC5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ400°C70°C644 K
AS4C256K16E0-50TC5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access timeAlliance-Semiconductor-CorporationTSOPII440°C70°C644 K
AS4C256K16F0-25JC5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ400°C70°C521 K
AS4C256K16F0-25JI5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ40-40°C85°C521 K
AS4C256K16F0-25TC5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access timeAlliance-Semiconductor-CorporationTSOPII440°C70°C521 K
AS4C256K16F0-25TI5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access timeAlliance-Semiconductor-CorporationTSOPII44-40°C85°C521 K
ST1200C16K1LPhase control thyristorInternational-Rectifier-2-40°C125°C186 K
ST1230C16K1LPhase control thyristorInternational-Rectifier-2-40°C125°C159 K
UM6K1NN-channel MOSFET, small switching (30V/0,1A)ROHMUMT66--108 K
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