| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD6N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 211 K |
| MTV6N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| OM6N100NK | 1000V N-channel MOSFET | distributor | - | 2 | -55°C | 150°C | 19 K |
| OM6N100SA | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
| PRN10016N1000J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N1001J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N1002J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N10R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10116N1001J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N1002J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| [1] 2 [3] [4] |
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