| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFE36N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFH6N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 77 K |
| IXFH6N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 118 K |
| IXFM6N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 77 K |
| IXFN36N100 | 1000V HiPerFET power MOSFET single die MOSFET | distributor | - | 4 | -55°C | 150°C | 122 K |
| IXFT6N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 118 K |
| PHD6N10E | 100 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 57 K |
| PHP26N10E | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 71 K |
| PHP6N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 53 K |
| PHP6N10E | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 65 K |
| PHP6N10E | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 65 K |
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