| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT006N3-00 | GaAs 30 dB IC voltage variable dual control attenuator DC-6 GHz | distributor | - | - | -55°C | 125°C | 175 K |
| AT006N3-01 | GaAs 30 dB IC voltage variable dual control attenuator DC-6 GHz | distributor | - | 7 | -55°C | 125°C | 40 K |
| AT006N3-93 | GaAs 30 dB IC voltage variable dual control attenuator DC-8 GHz | distributor | - | - | -40°C | 90°C | 49 K |
| MT4LC4M16N3-5 | 4Meg x 16 EDO DRAM | distributor | TSOP | 50 | 0°C | 70°C | 474 K |
| MT4LC4M16N3-6 | 4Meg x 16 EDO DRAM | distributor | TSOP | 50 | 0°C | 70°C | 474 K |
| PRN10016N3300J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N33R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N39R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10116N3300J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N3900J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
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