| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFIB6N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IXFK36N60 | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 192 K |
| IXFN36N60 | 600V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 192 K |
| MTB6N60E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 192 K |
| MTB6N60E1 | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 160 K |
| MTP6N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 153 K |
| MTP6N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 156 K |
| PRN10116N6800J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N6801J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| STP6N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 151 K |
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