| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB6N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 547 K |
| FQP6N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 536 K |
| FQPF6N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 544 K |
| PHB6N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
| PHP6N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
| PHX6N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 69 K |
| SGP6N60UF | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 510 K |
| SGP6N60UFD | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 570 K |
| SGR6N60UF | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 509 K |
| SGS6N60UF | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 530 K |
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