| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB6N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 75 K |
| PHP6N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 75 K |
| PHP6N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 75 K |
| PHX6N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 70 K |
| SGS6N60UFD | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 590 K |
| SGU6N60UF | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 506 K |
| SGW6N60UF | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 509 K |
| SGW6N60UFD | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 569 K |
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