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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416V1000BJ-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung-ElectronicSOJ420°C70°C84 K
KM416V1000BJL-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung-ElectronicSOJ420°C70°C84 K
KM416V1000BT-51M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50nsSamsung-ElectronicTSOP440°C70°C84 K
KM416V1000BT-61M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung-ElectronicTSOP440°C70°C84 K
KM416V1000BT-71M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70nsSamsung-ElectronicTSOP440°C70°C84 K
KM416V1000BTL-61M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60nsSamsung-ElectronicTSOP440°C70°C84 K
KM416V1000BTL-71M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70nsSamsung-ElectronicTSOP440°C70°C84 K
KM416V1004CJ-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1004CJ-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1004CJL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
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