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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CY7C4806V25-16616K x 80 Unidirectional Synchronous FIFOCypress-Semiconductor----340 K
CY7C4806V25-20016K x 80 Unidirectional Synchronous FIFOCypress-Semiconductor----340 K
KM416V254DJ-5256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh periodSamsung-ElectronicSOJ400°C70°C840 K
KM416V254DJ-6256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh periodSamsung-ElectronicSOJ400°C70°C840 K
KM416V254DJ-7256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh periodSamsung-ElectronicSOJ400°C70°C840 K
KM416V254DJL-5256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refreshSamsung-ElectronicSOJ400°C70°C840 K
KM416V254DJL-7256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refreshSamsung-ElectronicSOJ400°C70°C840 K
KM416V254DT-5256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh periodSamsung-ElectronicTSOP II400°C70°C840 K
LD1086V251.5V LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORSSGS-Thomson-Microelectronics----196 K
NM27C256V250 256K-Bit (32K x 8) High Performance CMOS EPROMFairchild-SemiconductorPLCC32--110 K
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