| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MD56V62160/H-10TA | 4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 305 K |
| MD56V62160/H-12TA | 4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 305 K |
| MD56V62160/H-15TA | 4-bank x 1,048,576-word x 16-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 305 K |
| MD56V62320-10TA | 4-bank x 524,288-word x 32-bit synchronous dynamic RAM | distributor | TSOP | 86 | 0°C | 70°C | 414 K |
| MD56V62400-10TA | 4-bank x 4,194,304-word x 4-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 303 K |
| MD56V62400-12TA | 4-bank x 4,194,304-word x 4-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 303 K |
| MD56V62800A-10TA | 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 367 K |
| MD56V62800A-8TA | 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM | distributor | TSOP | 54 | 0°C | 70°C | 367 K |
| MH16V6445BWJ-5 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
| MH16V6445BWJ-6 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
| 1 [2] [3] [4] |
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