| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GMS81C7016 | ROM/RAM size:16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller | distributor | MQFP | 64 | -20°C | 70°C | 2 M |
| GMS81C7016K | ROM/RAM size:16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller | distributor | DIP | 64 | -20°C | 70°C | 2 M |
| GMS81C7016Q | ROM/RAM size:16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller | distributor | MQFP | 64 | -20°C | 70°C | 2 M |
| GMS87C7016 | ROM/RAM size:16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller | distributor | DIP | 64 | -20°C | 70°C | 2 M |
| GMS87C7016 | ROM/RAM size:16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller | distributor | MQFP | 64 | -20°C | 70°C | 2 M |
| GMS87C7016K | ROM/RAM size:16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller | distributor | DIP | 64 | -20°C | 70°C | 2 M |
| GMS87C7016Q | ROM/RAM size:16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller | distributor | MQFP | 64 | -20°C | 70°C | 2 M |
| L8701P | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | - | 8 | -65°C | 150°C | 42 K |
| XC1701PD8C | Configuration PROM. | distributor | PDIP | 8 | 0°C | 70°C | 124 K |
| XC1701PD8I | Configuration PROM. | distributor | PDIP | 8 | -40°C | 85°C | 124 K |
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