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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IDT72V3670L10PF3.3V, high-density, low power, 8192 x 36-bit FIFO, 10nsIntegrated-Device-Technology-Inc-TQFP1280°C70°C567 K
IDT72V3670L15PF3.3V, high-density, low power, 8192 x 36-bit FIFO, 15nsIntegrated-Device-Technology-Inc-TQFP1280°C70°C567 K
IDT72V3670L15PFI3.3V, high-density, low power, 8192 x 36-bit FIFO, 15nsIntegrated-Device-Technology-Inc-TQFP128-40°C85°C567 K
IDT72V3670L7.5PF3.3V, high-density, low power, 8192 x 36-bit FIFO, 7.5nsIntegrated-Device-Technology-Inc-TQFP1280°C70°C567 K
ispLSI1032E-70LJIn-system programmable high density PLD, 15nsLattice-Semiconductor-CorporationPLCC840°C70°C164 K
ispLSI1032E-70LJIIn-system programmable high density PLD, 15nsLattice-Semiconductor-CorporationPLCC84-40°C85°C164 K
ispLSI1032E-70LJIIn-system programmable high density PLD, 15nsLattice-Semiconductor-CorporationPLCC84-40°C85°C164 K
ispLSI1032E-70LTIn-system programmable high density PLD, 15nsLattice-Semiconductor-CorporationTQFP1000°C70°C164 K
ispLSI1032E-70LTIIn-system programmable high density PLD, 15nsLattice-Semiconductor-CorporationTQFP100-40°C85°C164 K
M27C4001-70L1TR4 Mbit (512Kb x 8) EPROM, 70nsSGS-Thomson-MicroelectronicsLCCC320°C70°C113 K
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