Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IDT72V3670L10PF | 3.3V, high-density, low power, 8192 x 36-bit FIFO, 10ns | Integrated-Device-Technology-Inc- | TQFP | 128 | 0°C | 70°C | 567 K |
IDT72V3670L15PF | 3.3V, high-density, low power, 8192 x 36-bit FIFO, 15ns | Integrated-Device-Technology-Inc- | TQFP | 128 | 0°C | 70°C | 567 K |
IDT72V3670L15PFI | 3.3V, high-density, low power, 8192 x 36-bit FIFO, 15ns | Integrated-Device-Technology-Inc- | TQFP | 128 | -40°C | 85°C | 567 K |
IDT72V3670L7.5PF | 3.3V, high-density, low power, 8192 x 36-bit FIFO, 7.5ns | Integrated-Device-Technology-Inc- | TQFP | 128 | 0°C | 70°C | 567 K |
ispLSI1032E-70LJ | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
ispLSI1032E-70LJI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | -40°C | 85°C | 164 K |
ispLSI1032E-70LJI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | PLCC | 84 | -40°C | 85°C | 164 K |
ispLSI1032E-70LT | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
ispLSI1032E-70LTI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | -40°C | 85°C | 164 K |
M27C4001-70L1TR | 4 Mbit (512Kb x 8) EPROM, 70ns | SGS-Thomson-Microelectronics | LCCC | 32 | 0°C | 70°C | 113 K |
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