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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ISPLSI5384VA-70LB20870 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA208-55°C125°C350 K
ISPLSI5384VA-70LB27270 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C350 K
ISPLSI5384VA-70LB272I70 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C350 K
ISPLSI5384VA-70LB38870 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA388-55°C125°C350 K
ISPLSI5512VA-70LB27270 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA272-55°C125°C331 K
ISPLSI5512VA-70LB388I70 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA388-55°C125°C331 K
ISPLSI5512VA-70LB38870 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationBGA388-55°C125°C331 K
ISPLSI5512VA-70LQ20870 MHz in-system prommable 3.3V superWIDE high density PLDLattice-Semiconductor-CorporationPQFP208-55°C125°C331 K
M5M51016BTP-70LL1048576-bit (65536-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C82 K
M5M51016BTRRT-70LL1048576-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP440°C70°C79 K
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