| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4R271669B-MCG6 | 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271669B-MCK7 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271669B-MCK8 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271669B-NCG6 | 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| K4R271669B-NCK7 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| M57716L | 360-380MHz, 12.5V, 13W digital mobile radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H3 | 6 | -30°C | 110°C | 25 K |
| M57716M | Silicon bipolar power amplifier for 410-430MHz, 13W digital mobile | Mitsubishi-Electric-Corporation-Semiconductor-Group | H3 | 6 | -30°C | 110°C | 63 K |
| MGF7168C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 77 K |
| MGF7169C | UHF band GaAs power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -30°C | 85°C | 351 K |
| TK71716SCL | 1.6V Low dropout voltage regulator | distributor | SOT23 | 5 | -30°C | 80°C | 152 K |
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