| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
| K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
| NJU3718G | 20-bit serial to parallel converter | New-Japan-Radio-Co--Ltd--JRC | SSOP | 28 | -25°C | 85°C | 229 K |
| VSC7182TW | Quad transceiver for fibre channel and Gigabit ethernet. 3.3V power supply, 2.67 W max power dissipation | distributor | BGA | 208 | 0°C | 100°C | 233 K |
| VSC7185TW | Quad transceiver for fibre channel and Gigabit ethernet. 3.3V power supply, 2.5W dissipation | distributor | BGA | 208 | 0°C | 100°C | 243 K |
| VSC7186TW | Quad transceiver for Gigabit ethernet. 3.3V power supply, 2.67W max dissipation | distributor | BGA | 208 | 0°C | 100°C | 219 K |
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