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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ICM7250CProgrammable timer/counterMaxim-Integrated-ProducsDice-0°C70°C349 K
ICM7250DProgrammable timer/counterMaxim-Integrated-ProducsDice-0°C70°C349 K
ICM7250IJEProgrammable timer/counterMaxim-Integrated-ProducsCERDIP16-20°C85°C349 K
ICM7250IPEProgrammable timer/counterMaxim-Integrated-ProducsPlastic DIP16-20°C85°C349 K
MH16V725BATJ-51,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C149 K
MH16V725BATJ-61,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C149 K
MH16V725BWJ-51,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C129 K
MH16V725BWJ-61,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C129 K
MH32V725BST-52,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C135 K
MH32V725BST-62,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C135 K
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