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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AD7672KN03-0.3 to +7V; 1000mW; LC2MOS high-speed 12-bit ADCAnalog-DevicesDIP240°C70°C1 M
AD7672KP03-0.3 to +7V; 1000mW; LC2MOS high-speed 12-bit ADCAnalog-DevicesPLCC280°C70°C1 M
MH28D72KLG-109663676416-bit synchronous DRAM moduleMitsubishi-Electric-Corporation-Semiconductor-Group-1840°C70°C337 K
MH28D72KLG-759663676416-bit synchronous DRAM moduleMitsubishi-Electric-Corporation-Semiconductor-Group-1840°C70°C337 K
MH32D72KLH-102,415,919,104-bit synchronous DRAM moduleMitsubishi-Electric-Corporation-Semiconductor-Group-1840°C70°C348 K
MH32D72KLH-752,415,919,104-bit synchronous DRAM moduleMitsubishi-Electric-Corporation-Semiconductor-Group-1840°C70°C348 K
MH64D72KLG-104831838208-bit (67108864-word by 72-bit) double date rate synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1840°C70°C326 K
MH64D72KLG-754831838208-bit (67108864-word by 72-bit) double date rate synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1840°C70°C326 K
MH64D72KLH-104831838208-bit (67108864-word by 72-bit) double date rate synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1840°C70°C350 K
MH64D72KLH-754831838208-bit (67108864-word by 72-bit) double date rate synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1840°C70°C350 K
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