Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MF1172V-1 | Filter for the RF circuit mobile communication | Mitsubishi-Electric-Corporation-Semiconductor-Group | SMD | - | -20°C | 70°C | 48 K |
MH16S72VJB-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 930 K |
MH16S72VJB-6 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 930 K |
MH32S72VJA-6 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 935 K |
MH32S72VJA-6 | 2415919104-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 935 K |
MH64S72VJG-5 | 4831838208-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 958 K |
MH64S72VJG-6 | 4831838208-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 168 | 0°C | 70°C | 958 K |
NT256S72V89A0G-75B | 256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD | distributor | - | 144 | 0°C | 70°C | 172 K |
NT256S72V89A0G-7K | 256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD | distributor | - | 144 | 0°C | 70°C | 172 K |
NT256S72V89A0G-8B | 256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD | distributor | - | 144 | 0°C | 70°C | 172 K |
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