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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MF1172V-1Filter for the RF circuit mobile communicationMitsubishi-Electric-Corporation-Semiconductor-GroupSMD--20°C70°C48 K
MH16S72VJB-61,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C930 K
MH16S72VJB-61207959552-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C930 K
MH32S72VJA-62,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C935 K
MH32S72VJA-62415919104-bit synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C935 K
MH64S72VJG-54831838208-bit synchronous DRAM moduleMitsubishi-Electric-Corporation-Semiconductor-Group-1680°C70°C958 K
MH64S72VJG-64831838208-bit synchronous DRAM moduleMitsubishi-Electric-Corporation-Semiconductor-Group-1680°C70°C958 K
NT256S72V89A0G-75B256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPDdistributor-1440°C70°C172 K
NT256S72V89A0G-7K256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPDdistributor-1440°C70°C172 K
NT256S72V89A0G-8B256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPDdistributor-1440°C70°C172 K
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