Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4730A | Voltage regulator diode. Working voltage (nom) 3.9 V . | Philips-Semiconductors | SOD66 | 2 | -65°C | 200°C | 39 K |
1N4730A | Voltage regulator diode. Working voltage (nom) 3.9 V . | Philips-Semiconductors | SOD66 | 2 | -65°C | 200°C | 39 K |
1N4731A | Voltage regulator diode. Working voltage (nom) 4.3 V . | Philips-Semiconductors | SOD66 | 2 | -65°C | 200°C | 39 K |
BUK473-100A | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 9 A. | Philips-Semiconductors | SOT186A | 3 | 0°C | 150°C | 76 K |
BUK473-100B | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 8 A. | Philips-Semiconductors | SOT186A | 3 | 0°C | 150°C | 76 K |
BUK473-60A | PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 13 A. | Philips-Semiconductors | SOT186A | 3 | 0°C | 150°C | 73 K |
BUK473-60B | PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A. | Philips-Semiconductors | SOT186A | 3 | 0°C | 150°C | 73 K |
TC1173-2.5VOA | 300mA CMOS LDO with shutdown error output and bypass, output 2.5V | Microchip-Technology-Inc- | SOIC | 8 | -40°C | 125°C | 448 K |
TC1173-2.8VOA | 300mA CMOS LDO with shutdown error output and bypass, output 2.8V | Microchip-Technology-Inc- | SOIC | 8 | -40°C | 125°C | 448 K |
UAA2073AM | Image rejecting front-end for GSM applications. | Philips-Semiconductors | SSOP20 | 20 | -30°C | 75°C | 168 K |
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