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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N4730AVoltage regulator diode. Working voltage (nom) 3.9 V .Philips-SemiconductorsSOD662-65°C200°C39 K
1N4730AVoltage regulator diode. Working voltage (nom) 3.9 V .Philips-SemiconductorsSOD662-65°C200°C39 K
1N4731AVoltage regulator diode. Working voltage (nom) 4.3 V .Philips-SemiconductorsSOD662-65°C200°C39 K
BUK473-100APowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 9 A.Philips-SemiconductorsSOT186A30°C150°C76 K
BUK473-100BPowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 8 A.Philips-SemiconductorsSOT186A30°C150°C76 K
BUK473-60APowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 13 A.Philips-SemiconductorsSOT186A30°C150°C73 K
BUK473-60BPowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.Philips-SemiconductorsSOT186A30°C150°C73 K
TC1173-2.5VOA300mA CMOS LDO with shutdown error output and bypass, output 2.5VMicrochip-Technology-Inc-SOIC8-40°C125°C448 K
TC1173-2.8VOA300mA CMOS LDO with shutdown error output and bypass, output 2.8VMicrochip-Technology-Inc-SOIC8-40°C125°C448 K
UAA2073AMImage rejecting front-end for GSM applications.Philips-SemiconductorsSSOP2020-30°C75°C168 K
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