| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NDL7408P1K | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1KC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1KD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1L | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1LC | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P1LD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P2K | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P2KD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | - | 4 | -40°C | 85°C | 358 K |
| NDL7408P4KD | 1310 nm InGaAsP strained MQW DC-PBH laser diode | NEC-Electronics-Inc- | DIP | 8 | -40°C | 85°C | 358 K |
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