| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4747A | 20V glass silicon zener diode | distributor | - | 2 | - | - | 214 K |
| 1N747A | 500 milliwatts glass silicon zener diode | Motorola | - | 2 | -65°C | 200°C | 424 K |
| DL4747A | 12.5 mA glass silicon zener diode | distributor | - | 2 | - | - | 188 K |
| S-80747AL | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AL-EB-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AL-EB-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AL-EB-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AN-JB-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AN-JB-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80747AN-JB-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| [1] [2] 3 [4] [5] [6] |
|---|
