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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2S56D30ATP-75AL265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7, low powerMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP II660°C70°C768 K
P4SMAJ75A-T1Reverse stand-off voltage: 75.00V surface mount transient voltage suppressordistributorSMA2-55°C150°C65 K
P4SMAJ75A-T1Reverse stand-off voltage: 75.00V surface mount transient voltage suppressordistributorSMA2-55°C150°C65 K
P4SMAJ75A-T3Reverse stand-off voltage: 75.00V surface mount transient voltage suppressordistributorSMA2-55°C150°C65 K
P4SMAJ75A-T3Reverse stand-off voltage: 75.00V surface mount transient voltage suppressordistributorSMA2-55°C150°C65 K
P4SMAJ75A-T3Reverse stand-off voltage: 75.00V surface mount transient voltage suppressordistributorSMA2-55°C150°C65 K
P6KE75A-T3Reverse stand-off voltage: 64.10V, 600W transient voltage suppressordistributor-2-65°C175°C62 K
P6KE75A-TBReverse stand-off voltage: 64.10V, 600W transient voltage suppressordistributor-2-65°C175°C62 K
PD45128168G5-A75A-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
PD45128441G5-A75A-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
TMC1175AM7C20Linearity error 0.5 % Time conversion 40 ms Bits number of 8 Power Ptot 210 mWFairchild-SemiconductorSMD---707 K
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