| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4761A | 75 V, 1 W, glass passivated junction silicon zener diode | distributor | - | 2 | -55°C | 150°C | 348 K |
| IDT71V35761S200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761S200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761SA166BGI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | Integrated-Device-Technology-Inc- | BGA | 119 | -40°C | 85°C | 282 K |
| IDT71V35761SA166BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | -40°C | 85°C | 282 K |
| IDT71V35761SA183BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | -40°C | 85°C | 282 K |
| IDT71V35761SA200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761SA200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761YSA183BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | -40°C | 85°C | 282 K |
| TIPL761A | 1000 V, 4 A, NPN silicon power darlington | distributor | SOT | 3 | -65°C | 150°C | 901 K |
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