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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CY7C1316V18-200BZC18-Mb DDR-II SRAM two-word burst architecture, 200MHzCypress-SemiconductorFBGA1650°C70°C442 K
CY7C1316V18-250BZC18-Mb DDR-II SRAM two-word burst architecture, 250MHzCypress-SemiconductorFBGA1650°C70°C442 K
CY7C1318V18-250BZC18-Mb DDR-II SRAM two-word burst architecture, 250MHzCypress-SemiconductorFBGA1650°C70°C442 K
CY7C1320V18-200BZC18-Mb DDR-II SRAM two-word burst architecture, 200MHzCypress-SemiconductorFBGA1650°C70°C442 K
CY7C1320V18-250BZC18-Mb DDR-II SRAM two-word burst architecture, 250MHzCypress-SemiconductorFBGA1650°C70°C442 K
EMIF08-2005QEJEMI FILTER INCLUDING ESD PROTECTIONSGS-Thomson-Microelectronics----32 K
WMS512K8-20CM20ns; 512K x 8 monilithic SRAM, SMD 5962-95613distributorDIP32-55°C125°C114 K
WMS512K8-20CMA20ns; 512K x 8 monilithic SRAM, SMD 5962-95613distributorDIP32-55°C125°C114 K
WMS512K8-25CM25ns; 512K x 8 monilithic SRAM, SMD 5962-95613distributorDIP32-55°C125°C114 K
WMS512K8-25CMA25ns; 512K x 8 monilithic SRAM, SMD 5962-95613distributorDIP32-55°C125°C114 K
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