Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CY7C1316V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1316V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1318V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1320V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
CY7C1320V18-250BZC | 18-Mb DDR-II SRAM two-word burst architecture, 250MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
EMIF08-2005QEJ | EMI FILTER INCLUDING ESD PROTECTION | SGS-Thomson-Microelectronics | - | - | - | - | 32 K |
WMS512K8-20CM | 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 114 K |
WMS512K8-20CMA | 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 114 K |
WMS512K8-25CM | 25ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 114 K |
WMS512K8-25CMA | 25ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 114 K |
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