| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BTA08-200S | Sensitive gate triac, 8A, 200V | SGS-Thomson-Microelectronics | - | 3 | -40°C | 110°C | 187 K |
| BTB08-200S | Sensitive gate triac, 8A, 200V | SGS-Thomson-Microelectronics | - | 3 | -40°C | 110°C | 187 K |
| CY7C1316V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1318V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| CY7C1320V18-200BZC | 18-Mb DDR-II SRAM two-word burst architecture, 200MHz | Cypress-Semiconductor | FBGA | 165 | 0°C | 70°C | 442 K |
| EMIF08-2005QEJ | EMI FILTER INCLUDING ESD PROTECTION | SGS-Thomson-Microelectronics | - | - | - | - | 32 K |
| WMS512K8-20CI | 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -40°C | 85°C | 114 K |
| WMS512K8-20CIA | 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -40°C | 85°C | 114 K |
| WMS512K8-20CM | 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 114 K |
| WMS512K8-20CMA | 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 | distributor | DIP | 32 | -55°C | 125°C | 114 K |
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