| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUK436W-800A | PowerMOS transistor. | Philips-Semiconductors | TO247 | 3 | 0°C | 150°C | 69 K |
| BUK436W-800A | PowerMOS transistor. | Philips-Semiconductors | TO247 | 3 | 0°C | 150°C | 69 K |
| BUK436W-800A | PowerMOS transistor. | Philips-Semiconductors | SOT429 | 3 | 0°C | 150°C | 69 K |
| BUK444-800A | PowerMOS transistor. Drain-source voltage 800 V. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 67 K |
| BUK444-800A | PowerMOS transistor. Drain-source voltage 800 V. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 67 K |
| BUK446-800A | PowerMOS transistor. Drain-source voltage 800 V. Drain current(DC) 2.0 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 64 K |
| BUK454-800A | PowerMOS transistor. Drain-source voltage 800 V. Drain current(DC) 2.4 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 65 K |
| BUK456-800A | PowerMOS transistor. Drain-source voltage 800 V. Drain current(DC) 4 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 62 K |
| BUK854-800A | Insulated gate bipolar transistor (IGBT). | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 60 K |
| BUK856-800A | Insulated gate bipolar transistor (IGBT). | Philips-Semiconductors | TO220AB | 3 | 0°C | 150°C | 60 K |
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