| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416S8030BT-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FA | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030T-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KS8803BD | 10/15 CH PLL | Samsung-Electronic | - | 16 | -30°C | 75°C | 109 K |
| S5T8803A01-D0B0 | 10 CH PLL | Samsung-Electronic | - | 16 | -30°C | 75°C | 109 K |
| S5T8803A01-S0B0 | 10 CH PLL | Samsung-Electronic | - | 16 | -30°C | 75°C | 109 K |
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