Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AD8032AN | 2.7V; 80MHz rail-to-rail I/O amplifier. For high speed battery-operated systems, high component density systems | Analog-Devices | DIP | 8 | -40°C | 85°C | 258 K |
AD8032AR | 2.7V; 80MHz rail-to-rail I/O amplifier. For high speed battery-operated systems, high component density systems | Analog-Devices | SOIC | 8 | -40°C | 85°C | 258 K |
AD8032AR-REEL | 2.7V; 80MHz rail-to-rail I/O amplifier. For high speed battery-operated systems, high component density systems | Analog-Devices | SOIC | 8 | -40°C | 85°C | 258 K |
GS88032AT-133 | 133MHz 8.5ns 256K x 32 9Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 756 K |
GS88032AT-133I | 133MHz 8.5ns 256K x 32 9Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 756 K |
GS88032AT-150I | 150MHz 7.5ns 256K x 32 9Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 756 K |
GS88032AT-166I | 166MHz 7ns 256K x 32 9Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 756 K |
GS88032AT-200I | 200MHz 6.5ns 256K x 32 9Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 756 K |
GS88032AT-225I | 225MHz 65ns 256K x 32 9Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 756 K |
GS88032AT-250I | 250MHz 6ns 256K x 32 9Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 756 K |
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