| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AME8807BEHA | Output voltage: adj; 600mA CMOS LDO | distributor | SO | 8 | -40°C | 85°C | 91 K |
| BC80716 | PNP silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 36 K |
| BC80716 | PNP silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 36 K |
| IRF7807A | HEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm. | International-Rectifier | SO | 8 | -55°C | 150°C | 239 K |
| IRF7807D1 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 165 K |
| IRF7807D2 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 134 K |
| IRF7807V | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 159 K |
| IRF7807VD1 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 117 K |
| IRF7807VD2 | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =17mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 115 K |
| RS807M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 8.0A at Tc=75degC | distributor | - | 4 | -55°C | 150°C | 29 K |
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