| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N2807B | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 116 K |
| 1N5807US | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | B_MELF(WT) | - | - | - | 166 K |
| 1N5807US | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 59 K |
| BC807-16LT1 | PNP silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 90 K |
| BC807-25LT1 | PNP silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 90 K |
| BC807-40LT1 | PNP silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 90 K |
| MB3807APF | Power management switching IC (with flash memory power switching function) | Fujitsu-Microelectronis | plastic SOP | 16 | -40°C | 75°C | 123 K |
| S-80717AL | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80718AL | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| UZ7807L | Zener Voltage Regulator Diode | Microsemi-Corporation | C_LEAD | - | - | - | 127 K |
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