| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CA81-2 | 10 to 500 MHz cascadable amplifier | M-A-COM---manufacturer-of-RF | SMA | - | - | - | 100 K |
| P4C1681-20JC | 20 ns,static CMOS RAM, 4 K x 4 ultra high speed | distributor | SOJ | 24 | 0°C | 70°C | 59 K |
| P4C1681-20SC | 20 ns,static CMOS RAM, 4 K x 4 ultra high speed | distributor | SOIC | 24 | 0°C | 70°C | 59 K |
| P4C1681-25JC | 25 ns,static CMOS RAM, 4 K x 4 ultra high speed | distributor | SOJ | 24 | 0°C | 70°C | 59 K |
| P4C1681-25PC | 25 ns,static CMOS RAM, 4 K x 4 ultra high speed | distributor | DIP | 24 | 0°C | 70°C | 59 K |
| P4C1681-25SC | 25 ns,static CMOS RAM, 4 K x 4 ultra high speed | distributor | SOIC | 24 | 0°C | 70°C | 59 K |
| P4C1981-20JC | 20 ns,static CMOS RAM, 16 K x 4 ultra high speed | distributor | SOJ | 28 | 0°C | 70°C | 94 K |
| P4C1981-20PC | 20 ns,static CMOS RAM, 16 K x 4 ultra high speed | distributor | DIP | 28 | 0°C | 70°C | 94 K |
| P4C1981-25PC | 25 ns,static CMOS RAM, 16 K x 4 ultra high speed | distributor | DIP | 28 | 0°C | 70°C | 94 K |
| VTE1281-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 32 K |
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