| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962H9658101QEA | RadHard MSI: SMD. Quadruple S-R latches. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic DIP | 16 | -55°C | 125°C | 10 M |
| 5962H9658101QEC | RadHard MSI: SMD. Quadruple S-R latches. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). | distributor | Ceramic DIP | 16 | -55°C | 125°C | 10 M |
| 5962H9658101QXA | RadHard MSI: SMD. Quadruple S-R latches. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| 5962H9658101QXX | RadHard MSI: SMD. Quadruple S-R latches. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| 5962H9658101VEA | RadHard MSI: SMD. Quadruple S-R latches. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | distributor | Ceramic DIP | 16 | -55°C | 125°C | 10 M |
| KBPC810G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. | distributor | - | 4 | -55°C | 150°C | 128 K |
| KBU810G | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. | distributor | KBU | 4 | -55°C | 150°C | 138 K |
| KM681002CJ-10 | 128K x 8 high speed static RAM, 5V operating, 10ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 199 K |
| KM681002CJ-12 | 128K x 8 high speed static RAM, 5V operating, 12ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 199 K |
| KM681002CJ-15 | 128K x 8 high speed static RAM, 5V operating, 15ns | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 199 K |
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