| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ILC812J | 4V Microprocessor reset circuit | distributor | SOT | 4 | -40°C | 85°C | 79 K |
| K4E160812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E160812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 257 K |
| K4E170812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 257 K |
| K4F160812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F160812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| K4F170812D-B | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 226 K |
| K4F170812D-F | 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 28 | 0°C | 70°C | 226 K |
| K4F660812D-JC/L | 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. | Samsung-Electronic | SOJ | 32 | 0°C | 70°C | 368 K |
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