| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4H281638B-TCA2 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4H281638B-TCB0 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4H281638B-TLA0 | 128 Mb DDR SDRAM. Version 1.0, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4H281638B-TLA2 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4H281638B-TLB0 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4S281632B-NC/L1H | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=2), interface LVTTL, | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
| K4S281632B-NC/L1L | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
| PD45128163G5-A75L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
| PD45128163G5-A75T-9JF | 128M; 133MHz synchronous DRAM 4-bank, LVTTL | distributor | TSOP | 54 | -20°C | 85°C | 713 K |
| PD45128163G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
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