| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC817-16LT1 | NPN silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 90 K |
| BC817-25LT1 | NPN silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 90 K |
| MB3817PFV | Switching regulator controller | Fujitsu-Microelectronis | plastic SSOP | 16 | -40°C | 85°C | 240 K |
| MB89P817APF | 8-bit proprietary microcontroller | Fujitsu-Microelectronis | plastic QFP | 64 | -40°C | 85°C | 171 K |
| S-2817ACA-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | Chip | - | -40°C | 85°C | -- |
| S-2817ADP-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | DIP | 28 | -40°C | 85°C | -- |
| S-2817AFE-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | SOP | 28 | -40°C | 85°C | -- |
| S-2817ATF-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | TSOP | 28 | -40°C | 85°C | -- |
| S-80817ALNP-EAE-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| S-80817ANNP-EDE-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| << [14] [15] [16] [17] [18] 19 [20] [21] [22] [23] [24] >> |
|---|
