Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF820A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 100 K |
IRF820AL | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 133 K |
IRF820AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 133 K |
IRF820S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A | International-Rectifier | - | 3 | -55°C | 150°C | 172 K |
IRFI820G | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
RTL8201L | 3.3 V single port 10/100 MBPS fast ethernet phyceiver | distributor | LQFP | 48 | 0°C | 70°C | 353 K |
RTL8208 | 2.5/3.3 V single chip octal 10/100MBPS fast ethernet transceiver | distributor | QFP | 128 | 0°C | 70°C | 546 K |
SR820S | Schottky barrier rectifier. Max recurrent peak reverse voltage 20V, max RMS voltage 14V, max DC blocking voltage 20V. Max average forward recftified current 8.0A at derating case temperature | distributor | D2PAK | 3 | -65°C | 125°C | 24 K |
TV1820FK | 2000V fast recovery diode | distributor | DO9 | 2 | - | - | 66 K |
TV1820FM | 2000V fast recovery diode | distributor | DO9 | 2 | - | - | 66 K |
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