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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF820FIN-channel enhancement mode power MOS transistor, 500V, 2.2ASGS-Thomson-MicroelectronicsISOWATT2203-65°C150°C169 K
SB820F20 V, 8 A,isolation schottky barrier rectifierdistributor-2-50°C150°C147 K
SB820F20 V, 8 A, isolation schottky barrier rectifierdistributor-2-50°C150°C147 K
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