| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF830A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 108 K |
| IRF830AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 155 K |
| IRF830S | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A | International-Rectifier | - | 3 | -55°C | 150°C | 175 K |
| IRFI830G | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 1.5 Ohm, ID = 3.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 170 K |
| RTL8305S | 5-port 10/100 MBPS single chip switch controller | distributor | PQFP | 128 | 0°C | 70°C | 417 K |
| RTL8308B | 3.3 V single chip 8-port ethernet switch controller with embedded memory | distributor | PQFP | 128 | 0°C | 70°C | 397 K |
| ZC830ATA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 140 K |
| ZC830ATA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 140 K |
| ZC830BTA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 140 K |
| ZC830BTA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 140 K |
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