| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N2830A | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 116 K |
| 1N3830A | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 73 K |
| IRF830A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 108 K |
| IRF830AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 155 K |
| MLL3830A-1 | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 91 K |
| MLL3830A-1 | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 91 K |
| S-80830ALNP-EAT-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| S-80830ANNP-EDT-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| ZC830ATA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 140 K |
| ZC830ATA | 28 V, silicon hyperabrupt varactor diode | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 140 K |
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