| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS832418B-133 | 133MHz 11ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
| GS832418B-150 | 150MHz 10ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
| GS832418B-166 | 166MHz 8.5ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
| GS832418B-200 | 200MHz 7.5ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
| GS832418B-225 | 225MHz 6.5ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
| GS832418B-250 | 250MHz 6ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
| KS88C8324 | 8-bit single-chip CMOS microcontroller. | Samsung-Electronic | SDIP | 42 | -20°C | 85°C | 91 K |
| KS88P8324 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | SDIP | 42 | -20°C | 85°C | 91 K |
| KS88P8324 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | SDIP | 42 | -20°C | 85°C | 91 K |
| RBK83240 | 3200V, 4000A general purpose single diode | distributor | - | - | - | - | 427 K |
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