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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N2832BZener Voltage Regulator DiodeMicrosemi-Corporation----116 K
K4S560832B-TC/L1H8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C131 K
K4S560832B-TC/L1L8M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C131 K
K4S560832B-TC/L758M x 8bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C131 K
ZC832BTA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOT3-55°C150°C140 K
ZC832BTA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOT3-55°C150°C140 K
ZMV832BTA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOD2-55°C150°C140 K
ZMV832BTA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOD2-55°C150°C140 K
ZV832BV2TA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOD2-55°C150°C140 K
ZV832BV2TA28 V, silicon hyperabrupt varactor diodeZetex-SemiconductorSOD2-55°C150°C140 K
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