| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S280832A-TC/L10 | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 108 K |
| K4S280832A-TC/L80 | 4M x 8bit x 4 banks synchronous DRAM. Max freq. 125 MHz(CL=3). Interface LVTTL | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 108 K |
| MB3832APFV | DC/DC converter IC for charging | Fujitsu-Microelectronis | plastic SSOP | 20 | -30°C | 85°C | 219 K |
| MSC23832A-60BS16 | 8,388,608-word x 32-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 601 K |
| MSC23832A-70BS16 | 8,388,608-word x 32-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 601 K |
| MSC23832A-80BS16 | 8,388,608-word x 32-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 601 K |
| MSC23832A-80DS16 | 8,388,608-word x 32-bit DRAM module | distributor | - | 72 | 0°C | 70°C | 601 K |
| S-80832ALNP-EAW-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| S-80832ANNP-EDW-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| VCT3832A | Video/controller/teletext IC | Micronas-Intermetall | PSDIP | 64 | 0°C | 65°C | 2 M |
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