| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DU2840S | 2-175 MHz, 40W, 28V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 188 K |
| GL6840A | 26 V,electronic two tone ringer | distributor | DIP | 8 | -20°C | 75°C | 87 K |
| IRF840A | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | - | 3 | -55°C | 150°C | 89 K |
| IRF840AS | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 129 K |
| OM1840NCM | 5A three terminal, positive adjustable low dropout voltage regulator | distributor | Hermetic | 3 | -55°C | 150°C | 432 K |
| OM1840NKM | 5A three terminal, positive adjustable low dropout voltage regulator | distributor | Hermetic | 3 | -55°C | 150°C | 432 K |
| OM1840SCM | 5A three terminal, positive adjustable low dropout voltage regulator | distributor | Hermetic | 3 | -55°C | 150°C | 432 K |
| SR840S | Schottky barrier rectifier. Max recurrent peak reverse voltage 40V, max RMS voltage 28V, max DC blocking voltage 40V. Max average forward recftified current 8.0A at derating case temperature | distributor | D2PAK | 3 | -65°C | 125°C | 24 K |
| UF2840G | 100-500 MHz, 40 W, 28 V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 197 K |
| UF2840P | 100-500 MHz, 40 W, 28 V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 209 K |
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