Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AME8840EEEV | Output voltage: 3.8V; 300mA CMOS LDO | distributor | - | 5 | -40°C | 85°C | 114 K |
GS840E18T-100 | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
GS840E18T-100I | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 629 K |
GS840E18T-150 | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
GS840E18T-150I | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 629 K |
GS840E18T-166 | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
GS840E18T-166I | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 629 K |
GS840E18T-180 | 180MHz 8ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 629 K |
GS840E18T-180I | 180MHz 8ns 256K x 18 4Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 629 K |
MAX840ESA | Low-noise, regulated, -2V GaAsFET bias. Fixed -2V or adjustable -0.5V to -9.4V output at 4mA. 1microA max logic-level shutdown over temp. | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 161 K |
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