Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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5962-9685201HPA | Intelligent power module and gate drive interface optocoupler | distributor | - | 8 | -55°C | 125°C | 233 K |
5962-9685201HPC | Intelligent power module and gate drive interface optocoupler | distributor | - | 8 | -55°C | 125°C | 233 K |
5962-9685201HPX | Intelligent power module and gate drive interface optocoupler | distributor | - | 8 | -55°C | 125°C | 233 K |
5962-9685201HXA | Intelligent power module and gate drive interface optocoupler | distributor | - | 8 | -55°C | 125°C | 233 K |
5962-9685201HYA | Intelligent power module and gate drive interface optocoupler | distributor | - | 8 | -55°C | 125°C | 233 K |
5962-9685201HYC | Intelligent power module and gate drive interface optocoupler | distributor | - | 8 | -55°C | 125°C | 233 K |
MAX852C/D | Low-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. Logic-level shutdown mode: 1microA max over temp. | Maxim-Integrated-Producs | Dice | - | 0°C | 70°C | 118 K |
MAX852ESA | Low-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. Logic-level shutdown mode: 1microA max over temp. | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 118 K |
MAX852ISA | Low-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. Logic-level shutdown mode: 1microA max over temp. | Maxim-Integrated-Producs | SO | 8 | -25°C | 85°C | 118 K |
S1T8528X01-Q0R0 | Enhanced-1 chip CTO RF IC | Samsung-Electronic | - | 48 | -20°C | 70°C | 1 M |
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