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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962-9685201HPAIntelligent power module and gate drive interface optocouplerdistributor-8-55°C125°C233 K
5962-9685201HPCIntelligent power module and gate drive interface optocouplerdistributor-8-55°C125°C233 K
5962-9685201HPXIntelligent power module and gate drive interface optocouplerdistributor-8-55°C125°C233 K
5962-9685201HXAIntelligent power module and gate drive interface optocouplerdistributor-8-55°C125°C233 K
5962-9685201HYAIntelligent power module and gate drive interface optocouplerdistributor-8-55°C125°C233 K
5962-9685201HYCIntelligent power module and gate drive interface optocouplerdistributor-8-55°C125°C233 K
MAX852C/DLow-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. Logic-level shutdown mode: 1microA max over temp.Maxim-Integrated-ProducsDice-0°C70°C118 K
MAX852ESALow-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. Logic-level shutdown mode: 1microA max over temp.Maxim-Integrated-ProducsSO8-40°C85°C118 K
MAX852ISALow-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. Logic-level shutdown mode: 1microA max over temp.Maxim-Integrated-ProducsSO8-25°C85°C118 K
S1T8528X01-Q0R0Enhanced-1 chip CTO RF ICSamsung-Electronic-48-20°C70°C1 M
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