Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BC856A | PNP silicon AF transistor | Infineon-formely-Siemens | - | 3 | - | - | 271 K |
BC856AW | PNP silicon AF transistor | Infineon-formely-Siemens | - | 3 | - | - | 273 K |
BC856B | PNP silicon AF transistor | Infineon-formely-Siemens | - | 3 | - | - | 271 K |
BC856BW | PNP silicon AF transistor | Infineon-formely-Siemens | - | 3 | - | - | 273 K |
BC856S | PNP silicon AF transistor array | Infineon-formely-Siemens | - | 6 | - | - | 42 K |
FDR856P | P-Channel Logic Level Enhancement Mode Field Effect Transistor [Not recommended for new designs] | Fairchild-Semiconductor | - | - | - | - | 223 K |
NX8563LB-BA | InGaAsP strained MQW DFB laser diode module | NEC-Electronics-Inc- | - | - | - | - | 71 K |
NX8563LB-CA | InGaAsP strained MQW DFB laser diode module | NEC-Electronics-Inc- | - | - | - | - | 71 K |
UPA1856GR-9JG-E2 | Pch enhancement type MOS FET | NEC-Electronics-Inc- | - | - | - | - | 77 K |
UPD16856GS | Spindle motor driver IC(driving at 12V supply voltage) | NEC-Electronics-Inc- | - | - | - | - | 102 K |
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