| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4860A | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 65 K |
| DU2860T | 2-175 MHz, 60W, 28V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | 6 | - | - | 182 K |
| DU2860U | 2-175 MHz, 60W, 28V, RF MOSFET power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 203 K |
| MA08602FR | 14-14.5 GHz, 1 W power amplifier | M-A-COM---manufacturer-of-RF | - | 10 | - | - | 30 K |
| OM1860NHM | 1.5A three terminal, positive adjustable low dropout voltage regulator | distributor | Hermetic | 2 | -55°C | 150°C | 441 K |
| OM1860NKM | 1.5A three terminal, positive adjustable low dropout voltage regulator | distributor | Hermetic | 2 | -55°C | 150°C | 441 K |
| OM1860STM | 1.5A three terminal, positive adjustable low dropout voltage regulator | distributor | Hermetic | 2 | -55°C | 150°C | 441 K |
| SMP4860A | N-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 65 K |
| SR860S | Schottky barrier rectifier. Max recurrent peak reverse voltage 60V, max RMS voltage 42V, max DC blocking voltage 60V. Max average forward recftified current 8.0A at derating case temperature | distributor | D2PAK | 3 | -65°C | 150°C | 24 K |
| XCV1000E-6FG860C | Virtex-E 1.8V field programmable gate array. | distributor | Fine pitch BGA | 860 | 0°C | 85°C | 87 K |
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