| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4861A | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 65 K |
| ACT8611 | Radiation hardened 50 watt power supply module. Output voltage +5V | distributor | - | 10 | -55°C | 85°C | 127 K |
| ACT8612 | Radiation hardened 50 watt power supply module. Output voltage +12V | distributor | - | 10 | -55°C | 85°C | 127 K |
| ACT8613 | Radiation hardened 50 watt power supply module. Output voltage +15V | distributor | - | 10 | -55°C | 85°C | 127 K |
| ACT8614 | Radiation hardened 50 watt power supply module. Output voltage -12V | distributor | - | 10 | -55°C | 85°C | 127 K |
| ADS8616A8A-75 | 133 Mhz-333 LVTTL synchronous DRAM, 4 M x 16 bit x 4 banks | distributor | TSOP | 54 | 0°C | 70°C | 550 K |
| ADS8616A8A-75A | 133 Mhz-222 LVTTL synchronous DRAM, 4 M x 16 bit x 4 banks | distributor | TSOP | 54 | 0°C | 70°C | 550 K |
| SMP4861A | N-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 65 K |
| VDS8616A8A-75 | 133 Mhz-333 LVTTL synchronous DRAM, 4 M x 16 bit x 4 banks | distributor | TSOP | 54 | 0°C | 70°C | 538 K |
| VDS8616A8A-75A | 133 Mhz-222 LVTTL synchronous DRAM, 4 M x 16 bit x 4 banks | distributor | TSOP | 54 | 0°C | 70°C | 538 K |
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