| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2587P8705 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 187.05 THz. Center wavelength 1602.74 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| M-8870-01 | DTMF receiver | distributor | DIP | 18 | -40°C | 85°C | 301 K |
| M-8870-02 | DTMF receiver | distributor | DIP | 18 | -40°C | 85°C | 301 K |
| M68701M | Silicon MOS FET power amplifier, 860-915MHz 6W FM/digital mobile | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -30°C | 100°C | 77 K |
| M68701M | Silicon MOS FET power amplifier, 860-915MHz 6W FM/digital mobile | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -30°C | 100°C | 77 K |
| M68703SHA | RF power module for 470-490MHz, 12.5V, 50W FM mobile radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H3 | 6 | -30°C | 110°C | 34 K |
| M68706 | RF power module for 250-270MHz, 12.5V, 30W FM mobile radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H3 | 6 | -30°C | 110°C | 85 K |
| M68706H | RF power module for 300-308MHz, 12.5V, 20W FM mobile radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H3 | 6 | -30°C | 110°C | 28 K |
| M68707 | RF power module for 250-270MHz, 9.6V, 7W FM portable radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H13 | 6 | -30°C | 110°C | 46 K |
| M68707L | RF power module for 215-230MHz, 9.6V, 7W FM portable radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H13 | 6 | -30°C | 110°C | 47 K |
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