| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962-9858701QXA | SuMMIT RTE MIL-STD-1553 dual redundant remote terminal w/integrated bus transceiver & memory: SMD. +5V operation. Class Q. Lead finish solder. | distributor | PGA | 139 | -55°C | 125°C | 8 M |
| ICS8701CYI | Low skew -1, -2 clock generator | distributor | LQFP | 48 | -40°C | 85°C | 123 K |
| KS8701 | FLEX roaming decoder II data sheet. supply voltage 1.8 V to 3.6 V, operating frequency 76.8kHz or 160 kHz | Samsung-Electronic | - | 32 | -25°C | 85°C | 434 K |
| L8701P | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | - | 8 | -65°C | 150°C | 42 K |
| M68701 | RF power module for 820-851MHz, 6W FM portable radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -30°C | 110°C | 28 K |
| M68701H | RF power module for 890-960MHz, 6W FM digital radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H11 | 5 | -30°C | 100°C | 133 K |
| M68701M | RF power module for 890-915MHz, 6W FM digital radio | Mitsubishi-Electric-Corporation-Semiconductor-Group | H11 | 5 | -30°C | 100°C | 142 K |
| M68701M | Silicon MOS FET power amplifier, 860-915MHz 6W FM/digital mobile | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -30°C | 100°C | 77 K |
| M68701M | Silicon MOS FET power amplifier, 860-915MHz 6W FM/digital mobile | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -30°C | 100°C | 77 K |
| MA48701E | 15 V, GaAs multiplier varactor | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 88 K |
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